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Ordering number:EN5029
FX509
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Features
* Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. * The FX509 houses two chips, each being equivalent to the 2SB1215, in one package. * Matched pair characteristics.
Package Dimensions
unit:mm 2118
[FX509]
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 SANYO:XP6 (Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Base1 2:Emitter1 3:Emitter2 4:Base2 5:Collector2 6:Collector1 (Top view)
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg Mounted on ceramic board (750mm2x0.8mm) 1unit Mounted on ceramic board (750mm2x0.8mm) Conditions Ratings -120 -100 -6 -3 -6 -0.6 1.5 2 150 -55 to +150 Unit V V V A A A W W C C
* Marking:509
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42695MO (KOTO) TA-0095 No.5029-1/4
FX509
Continued from preceding page. Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 hFE(small/ large) fT Cob VCE(sat) VBE(sat) VCB=-100V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=--500mA VCE=-5V, IC=-2A VCE=-5V, IC=-500mA VCE=-5V, IC=-500mA VCB=-10V, f=1MHz IC=-1.5A, IB=-150mA -120 -100 -6 100 800 50 140 40 0.8 180 40 -200 -0.9 -500 -1.2 MHz pF mV V V V V ns ns ns Conditions Ratings min typ max -1 -1 400 Unit A A
IC=-1.5A, IB=-150mA V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-1mA, RBE= V(BR)EBO ton tstg tf IE=-10A, IC=0 See sepcified Test Circuit See sepcified Test Circuit See sepcified Test Circuit
No.5029-2/4
FX509
No.5029-3/4
FX509
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice.
PS No.5029-4/4

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